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CY62256V
256K (32K x 8) Static RAM
Features
* Temperature Ranges -- Commercial: 0C to 70C -- Industrial: -40C to 85C -- Automotive: -40C to 125C * Speed: 70 ns and 100 ns * Low voltage range: -- CY62256V (2.7V-3.6V) * * * * * * -- CY62256V25 (2.3V-2.7V) Low active power and standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a standard 450-mil-wide (300-mil body width) 28-lead narrow SOIC, 28-lead TSOP-1, and reverse 28-lead TSOP-1 package
Functional Description[1]
The CY62256V family is composed of two high-performance CMOS static RAM's organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins. The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.
Logic Block Diagram
INPUTBUFFER A10 A9 A8 A7 A6 A5 A4 A3 A2 CE WE OE A14 A13 A12 A11 A1 A0 ROW DECODER
I/O0 I/O1 SENSE AMPS I/O2 I/O3 I/O4 I/O5
512 x 512 Y ARRA
COLUMN DECODER
POWER DOWN
I/O6 I/O7
Note: 1. For best practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress.com.
Cypress Semiconductor Corporation Document #: 38-05057 Rev. *D
*
3901 North First Street
*
San Jose
*
CA 95134 * 408-943-2600 Revised June 28, 2004
CY62256V
Product Portfolio
Power Dissipation VCC Range (V) Product CY62256VLL CY62256VLL CY62256V25LL Range Com'l / Ind'l Automotive Com'l Min. 2.7 2.7 2.3 Typ.[2] 3.0 3.0 2.5 Max. 3.6 3.6 2.7 Speed (ns) 70 70 100 Operating, ICC (mA) Typ.[2] 11 11 9 Max. 30 30 15 Standby, ISB2 (A) Typ.[2] 0.1 0.1 0.1 Max. 5 130 4
Pin Configurations
Narrow SOIC Top View
A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A4 A3 A2 A1 OE A0 CE I/O7 I/O6 I/O5 I/O4 I/O3
A11 A10 A9 A8 A7 A6 A5 VCC WE A4 A3 A2 A1 OE
7 6 5 4 3 2 1 28 27 26 25 24 23 22
8 9 10 11 12 13 14 15 16 17 18 19 20 21
TSOP I Reverse Pinout Top View (not to scale)
A12 A13 A14 I/O0 I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6 I/O7 CE A0
OE A1 A2 A3 A4 WE VCC A5 A6 A7 A8 A9 A10 A11
22 23 24 25 26 27 28 1 2 3 4 5 6 7
21 20 19 18 17 16 15 14 13 12 11 10 9 8
TSOP I Top View (not to scale)
A0 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A14 A13 A12
Pin Definitions
Pin Number 1-10, 21, 23-26 11-13, 15-19 27 20 22 Input Input/Output Input/Control Input/Control Input/Control Type A0-A14. Address Inputs I/O0-I/O7. Data lines. Used as input or output lines depending on operation WE. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted CE. When LOW, selects the chip. When HIGH, deselects the chip OE. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins GND. Ground for the device Vcc. Power supply for the device Description
14 28
Ground Power Supply
Notes: 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ., TA = 25C, and tAA = 70 ns.
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CY62256V
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential (Pin 28 to Pin 14) ........................................... -0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[3] ....................................-0.5V to VCC + 0.5V DC Input Voltage[3] .................................-0.5V to VCC + 0.5V Output Current into Outputs (LOW) .............................20 mA CY62256V25 Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current.................................................... > 200 mA
Operating Range
Device CY62256V Range Commercial Industrial Automotive Commercial Ambient Temperature (TA) [4] 0C to +70C -40C to +85C -40C to +125C 0C to +70C 2.3V to 2.7V VCC 2.7V to 3.6V
Electrical Characteristics Over the Operating Range
CY62256V-70 Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input Leakage Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-down Current-- TTL Inputs Automatic CE Power-down Current-- CMOS Inputs GND < VIN < VCC Com'l, Ind'l Automotive GND < VIN < VCC, Output Disabled Com'l, Ind'l Automotive VCC = 3.6V, IOUT = 0 mA, f = fMAX = 1/tRC VCC = 3.6V, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX All ranges All ranges IOH = -1.0 mA IOL = 2.1 mA Test Conditions VCC = 2.7V VCC = 2.7V 2.2 -0.5 -1 -10 -1 -10 11 100 0.1 Min. 2.4 0.4 VCC +0.3V 0.8 +1 +10 +1 +10 30 300 5 10 130 Typ.[2] Max. Unit V V V V A A A A mA A
VCC = 3.6V, CE > VCC - 0.3V Com'l VIN > VCC - 0.3V or VIN < 0.3V, f = 0 Ind'l Automotive
Electrical Characteristics Over the Operating Range
CY62256V25-100 Parameter VOH VOL VIH VIL IIX IOZ Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current GND < VIN < VCC GND < VIN < VCC, Output Disabled IOL = 0.1 mA Test Conditions IOH = -0.1 mA Vcc=2.3V Vcc= 2.3V 1.7 -0.3 -1 -1 Min. 2 0.4 Vcc + 0.3V 0.7 +1 +1 Typ.[2] Max. Unit V V V V A A
Notes: 3. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 4. TA is the "Instant-On" case temperature
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CY62256V
Electrical Characteristics Over the Operating Range (continued)
CY62256V25-100 Parameter ICC ISB1 ISB2 Description Test Conditions Com'l, Ind'l Com'l, Ind'l Min. Typ.[2] 9 75 0.1 Max. 15 225 4 8 Unit mA A VCC Operating Supply Current VCC = 2.7V, IOUT = 0 mA, f = fMAX = 1/tRC Automatic CE Power-down Current-- TTL Inputs Automatic CE Power-down Current -- CMOS Inputs VCC = 2.7V, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX
Com'l VCC = 2.7V, CE > VCC - 0.3V VIN > VCC - 0.3V or VIN < 0.3V, f = 0 Ind'l
Capacitance[5]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 3.0V Max. 6 8 Unit pF pF
AC Test Loads and Waveforms
R1 VCC OUTPUT 50 pF INCLUDING JIG AND SCOPE R2 VCC GND 10% ALL INPUT PULSES 90% 90% 10% < 5 ns
< 5 ns Equivalent to: THEVENIN EQUIVALENT Rth Vth
OUTPUT
Parameter R1 R2 RTH VTH
3.3V 1100 1500 645 1.750
2.5V 16600 15400 8000 1.20
Units Ohms Ohms Ohms Volts
Notes: 5. Tested initially and after any design or process changes that may affect these parameters.
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CY62256V
Data Retention Characteristics (Over the Operating Range)
Parameter VDR ICCDR Description VCC for Data Retention Data Retention Current VCC = 1.6V, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V Com'l Ind'l Auto tCDR[6] tR[6] Chip Deselect to Data Retention Time Operation Recovery Time 0 tRC Conditions[6] Min. 1.4 0.1 3 6 50 ns ns Typ.[2] Max. Unit V A
Data Retention Waveform
DATA RETENTION MODE VCC CE 1.8V tCDR VDR > 1.4V 1.8V tR
Thermal Resistance
Parameter JA JC Description Test Conditions SOIC 68.45 26.94 TSOPI 87.62 23.73 RTSOPI 87.62 23.73 Unit C/W C/W Thermal Resistance Still Air, soldered on a 3 x 4.5 inch, (Junction to Ambient)[6] four-layer printed circuit board Thermal Resistance (Junction to Case)[5]
Notes: 6. No input may exceed VCC + 0.3V.
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CY62256V
Switching Characteristics Over the Operating Range[7]
CY62256V-70 Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write Cycle[10, 11] tWC tSCE tAW tHA tSA tPWE tSD tHD tHZWE tLZWE Write Cycle Time CE LOW to Write End Address Set-up to Write End Address Hold from Write End Address Set-up to Write Start WE Pulse Width Data Set-up to Write End Data Hold from Write End WE LOW to High-Z[8, 9] WE HIGH to Low-Z[8] 10 70 60 60 0 0 50 30 0 25 10 100 90 90 0 0 80 60 0 50 ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low-Z
[8]
CY62256V25-100 Min. 100 Max. Unit ns 100 10 100 75 5 50 10 50 0 100 ns ns ns ns ns ns ns ns ns ns
Description
Min. 70
Max.
70 10 70 35 5 25 10 25 0 70
OE HIGH to High-Z[8, 9] CE LOW to Low-Z[8] CE HIGH to High-Z[8, 9] CE LOW to Power-up CE HIGH to Power-down
Notes: 7. Test conditions assume signal transition time of 5 ns or less timing reference levels of VCC/2, input pulse levels of 0 to VCC, and output loading of the specified IOL/IOH and 100-pF load capacitance. 8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 9. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
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CY62256V
Switching Waveforms
Read Cycle No. 1[12, 13]
tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID
Read Cycle No. 2 [13, 14]
CE tACE OE tDOE t LZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT t PU 50% t HZOE tHZCE DATA VALID t PD ICC 50% ISB t RC
DATA OUT
HIGH IMPEDANCE
Write Cycle No. 1 (WE Controlled)
ADDRESS
[10, 15, 16]
tWC
CE tAW WE tSA t PWE tHA
OE tSD DATA I/O NOTE 17 t HZOE
Notes: 12. Device is continuously selected. OE, CE = VIL. 13. WE is HIGH for read cycle.
tHD
DATAINVALID
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CY62256V
Switching Waveforms (continued)
Write Cycle No. 2 (CE Controlled) [10, 15, 16]
tWC ADDRESS CE tSA tAW WE tSD DATA I/O DATAINVALID t HD tHA tSCE
Write Cycle No. 3 (WE Controlled, OE LOW)[11, 16]
tWC ADDRESS
CE tAW tSA WE tSD DATA I/O NOTE 17 t HZWE
Notes: 14. Address valid prior to or coincident with CE transition LOW. 15. Data I/O is high impedance if OE = VIH. 16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 17. During this period, the I/Os are in output state and input signals should not be applied.
t HA
t HD
DATA INVALID tLZWE
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CY62256V
Typical DC and AC Characteristics
1.8 1.6 1.4 NORMALIZED ICC NORMALIZED I CC 1.2 1.0 0.8 0.6 0.4 0.2 2.4 2.8 1.6 1.8 2.0 3.2 3.6 TA= 25C NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 1.2 1.0 ISB2 A 0.8 0.6 0.4 0.2 0.0 SUPPLY VOLTAGE (V)
VCC = 2.5V
NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE
VCC = 3.0V
STANDBY CURRENT vs. AMBIENT TEMPERATURE 3.0 2.5 2.0
3. 3V V
cc
1.5 1.0 0.5 0.0 ISB
-55
25
125
-0.5
-55
25
V
cc
=
2. 5V
=
105
AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 1.6
AA
AMBIENT TEMPERATURE (C) OUTPUT SINK CURRENT 14 vs. OUTPUT VOLTAGE 12 10 8 6 4 2 0 0.0 1.0 2.0 3.0
VCC = 2.5 V TA = 25C
2.5 NORMALIZED t AA 2.0 1.5 1.0 0.5
1.4
VCC = 2.5V
VCC = 3.0V
1.2 1.0 0.8 0.6
TA = 25C
0.0 1.65
2.1
2.6
3.1
3.6
-55
25
125
OUTPUT SINK CURRENT (mA)
NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE
NORMALIZED t
SUPPLY VOLTAGE (V) OUTPUT SOURCE CURRENT (mA)
AMBIENT TEMPERATURE (C) OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE -14 -12 -10 -8 -6 -4 0 0.0 0.5 1.0 1.5 2 2.5
VCC = 2.5V TA = 25C
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
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CY62256V
Typical DC and AC Characteristics (continued)
TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 30.0 NORMALIZED ICC DELTA tAA (ns) 25.0 T = 25C A VCC = 3V 20.0 15.0 10.0 5.0 0.0 0 200 400 600 800 1000 0.50 1 10 20 30 NORMALIZED I CC vs.CYCLE TIME 1.25
VCC = 3.0V
1.00 TA = 25C VIN = 0.5V
0.75
CAPACITANCE (pF)
CYCLE FREQUENCY (MHz)
Truth Table
CE WE OE
Inputs/Outputs High-Z Data Out Data In High-Z Read Write
Mode Deselect/Power-down
Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC)
H L L L
X H L H
X L X H
Deselect, Output Disabled
Ordering Information
Speed (ns) 70 Ordering Code CY62256VLL-70SNC CY62256VLL-70ZC CY62256VLL-70ZI CY62256VLL -70SNI CY62256VLL-70ZRI CY62256VLL-70SNE CY62256VLL-70ZE CY62256VLL-70ZRE 100 CY62256V25LL-100ZC SN28 ZR28 SN28 Z28 ZR28 Z28 28-lead (300-mil Narrow Body) Narrow SOIC 28-lead Reverse Thin Small Outline Package 28-lead (300-mil Narrow Body) Narrow SOIC 28-lead Thin Small Outline Package 28-lead Reverse Thin Small Outline Package 28-lead Thin Small Outline Package Commercial Automotive Package Name SN28 Z28 Package Type 28-lead (300-mil Narrow Body) Narrow SOIC 28-lead Thin Small Outline Package Industrial Operating Range Commercial
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CY62256V
Package Diagrams
28-lead (300-mil) SNC (Narrow Body) SN28
51-85092-*B
28-lead Thin Small Outline Package Type 1 (8 x 13.4 mm) Z28
51-85071-*G
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CY62256V
Package Diagrams (continued)
28-lead Reverse Type 1 Thin Small Outline Package (8 x 13.4 mm) ZR28
51-85074-*F
All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05057 Rev. *D
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(c) Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY62256V
Document Title: CY62256V 256K (32K x 8) Static RAM Document Number: 38-05057 REV. ** *A *B *C *D ECN NO. Issue Date 107248 111445 115229 116507 239134 09/10/01 11/01/01 05/23/02 09/04/02 See ECN Orig. of Change SZV MGN GBI GBI AJU Description of Change Changed from spec number: 38-00519 to 38-05057 Removed obsolete parts. Change to standard format Changed SN package diagram Added footnote 1 Clarified ICC spec for VCC(typ) = 2.5V Added Automotive product information
Document #: 38-05057 Rev. *D
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